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(R)
L9997ND
DUAL HALF BRIDGE DRIVER
HALF BRIDGE OUTPUTS WITH TYPICAL RON = 0.7 OUTPUT CURRENT CAPABILITY 1.2A OPERATING SUPPLY VOLTAGE RANGE 7V TO 16.5V SUPPLY OVERVOLTAGE PROTECTION FUNCTION FOR VVS UP TO 40V VERY LOW QUIESCENT CURRENT IN STANDBY MODE < 1A CMOS COMPATIBLE INPUTS WITH HYSTERESIS OUTPUT SHORT-CIRCUIT PROTECTION THERMAL SHUTDOWN REAL TIME DIAGNOSTIC: THERMAL OVERLOAD, OVERVOLTAGE DESCRIPTION The L9997ND is a monolithic integrated driver, in BCD technology intended to drive various loads, BLOCK DIAGRAM
VS
1
MULTIPOWER BCD TECHNOLOGY
SO20 (12+4+4) ORDERING NUMBERS: L9997ND L9997ND013TR
including DC motors. The circuit is optimized for automotive electronics enviromental conditions.
VS
DIAG
11
EN
10
ENABLE
REFERENCE BIAS
PROTECTION FUNC TIONS
5V
VS
IN1
12
OUT1 DRIVER 1
19
M
VS
IN2
9
OUT2 DRIVER 2
2
GND
4...7, 14...17
April 1999
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L9997ND
ABSOLUTE MAXIMUM RATINGS
Symbol V VSDC VVSP IOUT VIN1,2 V EN VDIAG IOUT IDIAG DC Supply Voltage Supply Voltage Pulse (T < 400ms) DC Output Current DC Input Voltage Enable Input Voltage DC Output Voltage DC Output Short-circuit Current -0.3V < VOUT < VS + 0.3V DC Sink Current -0.3V < VDG < 7V Parameter Value -0.3 to 26 40 1.8 -0.3 to 7 -0.3 to 7 -0.3 to 7 internally limited internally limited Unit V V A V V V
PIN CONNECTION (Top view)
VS OUT2 N.C. GND GND GND GND N.C. IN2 EN 1 2 3 4 5 6 7 8 9 10
D95AT166
20 19 18 17 16 15 14 13 12 11
N.C. OUT1 N.C. GND GND GND GND N.C. IN1 DIAG
PIN FUNCTIONS
N. 1 2 3, 8, 13, 18,20 4 to 7, 14 to 17 9 10 11 12 Name VS OUT2 NC GND IN2 EN DIAG IN1 Supply Voltage Channel 2: Push-Pull power output with intrinsic body diode NC: Not Connected Ground: signal - and power - ground, heat sink Input 2: Schmitt Trigger input with hysteresis (non-inverting signal control) Enable: LOW or not connected on this input switches the device into standby mode and the outputs into tristate Diagnostic: Open Drain Output that switches LOW if overvoltage or overtemperature is detected Input 1: Schmitt Trigger input with hysteresis (non-inverting signal control) Function
THERMAL DATA
Symbol TjTS TjTSH Rth j-amb Rth j-pins
2
Parameter Thermal Shut-down Junction Temperature Thermal Shut-down Threshold Hysteresis Thermal Resistance Junction-Ambient Thermal Resistance Junction-Pins
(1)
Value 165 25 50 15
Unit C K K/W K/W
(1) With 6cm on board heatsink area.
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L9997ND
ELECTRICAL CHARACTERISTICS (7V < VS < 16.5V; -40C < TJ < 150C; unless otherwise specified.)
Symbol IVS_SB IVS VENL VENH VENthh IEN VIN1,2L VIN1,2H VIN1,2thh IIN1,2 RON OUT1,2 Parameter Quiescent Current in Standby Mode Supply Current Low Enable Voltage High Enable Voltage Enable Threshold Hysteresis Enable Input Current Low Input Voltage High Input Voltage Input Threshold Hysteresis Input Bias Current ON-Resistance to Supply or GND Output Current Limitation Diagnostic Output Drop IDIAG = 0.5mA, EN = HIGH Overvoltage or Thermal Shutdown 17 See Fig. 2; VVS = 13.5V Measured with 93 load 19 50 30 10 2 Rising Delay Time Falling Delay Time Rise Time Fall Time 115 115 30 60 25 50 VIN = 0 VIN = 5V, EN = HIGH IOUT = 0.8A; V VS = 7V; Tj = 125C IOUT = 0.8A; VVS = 12V; Tj = 125C IOUT = 0.8A; V VS = 12V; Tj = 25C 1.2 -3 2 3.5 1 0 10 1.2 1.1 0.7 1.6 1 50 2.8 2.25 2.2 0.6 VEN = 5V 3.5 1 85 250 1.5 Test Condition VEN < 0.3V; VVS <16.5V; Tj < 85(*) VEN = 0; VVS = 14.5V; Tj = 25C EN = HIGH, IOUT1,2 = 0 Min. Typ. <1 <1 2 Max. 90 10 6 1.5 6 Unit A A mA V V V A V V V A A A V
|IOUT1,2| VDIAG
VVSOVth tONLH tONHL tOFFHL tOFFLH tdHL tdLH trHS trLS tfHS tfLS
Supply Overvoltage Threshold Turn on Delay Time Turn off Delay Time
21 150 150 100 20 250 250 100 150 100 150
V s s s s s s s s s s
* Tested at 125C and guaranteed by correlation
FUNCTIONAL DESCRIPTION The L9997ND is a motor driver two half-bridge Table 1. Table function.
Status 1 2 3 4 5 6 EN L H H H H H IN1 X H H L L X IN2 X H L H L X OUT1 Tristate SRC SRC SNK SNK Tristate
outputs, intended for driving dc motors in automotive systems. The basic function of the device is shown in the Table 1.
OUT2 Tristate SRC SNK SRC SNK Tristate
DIAG OFF OFF OFF OFF OFF ON
NOTE Standby Mode Recommended for braking
Overvoltage or Overtemperature
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The device is activated with enable input voltage HIGH. For enable input floating (not connected) or LOW the device is in Standby Mode. Very low quiescent current is defined for VEN < 0.3V. When activating or disactivating the device by the enable input a wake-up time of 50s is recommended. For braking of the motor the status 2 is recommended. The reason for this recommendation is that the device features higher threshold for initialisation of parasitic structures than in state 5. The inputs IN1, IN2 features internal sink current generators of 10A, disabled in standby mode. With these input current generators the input level is forced to LOW for inputs open. In this condition the outputs are in SNK state. The circuit features an overvoltage disable function referred to the supply voltage VVS. This function assures disabling the power outputs, when the supply voltage exceeds the over voltage threshold value of 19V typ. Both outputs are forced to tristate in this condition and the diagnostic output is ON. The thermal shut-down disables the outputs (tristate) and activates the diagnostic when the junction temperature increases above the thermal shut-down threshold temperature of min. 150C. For the start of a heavy loaded motor, if the motor current reaches the max. value, it is necessary to respect the dynamical thermal resistance junction to ambient. The outputs OUT1 and OUT2 are protected against short circuit to GND or VS, for supply voltages up to the overvoltage disable threshold. The output power DMOS transistors works in linear mode for an output current less than 1.2A. Increasing the output load current (> 1.2A) the output transistor changes in the current regulation mode, see Fig.6, with the typical output current value below 2A. The SRC output power DMOS transistors requires a voltage drop ~3V to activate the current regulation. Below this voltage drop is the device also protected. The output current heat up the power DMOS transistor, the RDSON increases with the junction temperature and decreases the output current. The power dissipation in this condition can activate the thermal shutdown . In the case of output disable due to thermal overload the output remains disabled untill the junction temperature decreases under the thermal enable threshold. Permanent short circuit condition with power dissipation leading to chip overheating and activation of the thermal shut-down leads to the thermal oscillation. The junction temperature difference between the switch ON and OFF points is the thermal hysteresis of the thermal protection. This hysteresis together with the thermal impedance and ambient temperature determines the frequency of this thermal oscillation, its typical values are in the range of 10kHz. The open drain diagnostic output needs an external pull-up resistor to a 5V supply. In systems with several L9997ND the diagnostic outputs can be connected together with a common pull-up resistor. The DIAG output current is internally limited. Fig. 1 shows a typical application diagram for the DC motor driving. To assure the safety of the circuit in the reverse battery condition a reverse protection diode D1 is necessary. The transient protection diode D2 must assure that the maximal supply voltage V VS during the transients at the VBAT line will be limited to a value lower than the absolute maximum rating for VVS.
Figure 1: Application Circuit Diagram.
Is 5V 47K IDIAG1 DIAG1 OUT1 IIN1 CONTROL LOGIC IN1 IM IOUT1 VS CS D2 D1 VBAT
IIN2 IN2 IEN EN
L9997ND
M OUT2 IOUT2 GND GND VM
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Figure 2. Timing Diagram.
Standby Mode Operating Mode Overtemperature or Overvoltage Standby Mode
EN
IN1 IN2
DIAG t dLH 90% OUT1 Tristate Tristate 10% tONLH 90% 50% OUT2 Tristate 10% tr tf Tristate Tristate tr t dHL tf t dLH t dHL t dLH t OFFHL Tristate t dHL t dLH t dHL t OFFLH
tONHL
Figure 3. Typical R ON - Characteristics of Source and Sink Stage
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Figure 4. Quiescent current in standby mode versus supply voltage.
Figure 5. ON-Resistance versus supply voltage.
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Figure 6. IOUT versus VOUT (pulsed measurement with TON = 500s, TOFF = 500ms).
Figure 7. Test circuit.
12V
100F
200nF VS 10k EN DIAG 5V
IN1
L9997ND
OUT1
15
IN2 V EN VIN1 VIN2 GND
OUT2
15
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com
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